{pioducti, una. 20 stern ave. springfield, new jersey 07081 u.s.a. switchmode series npn silicon power transistors these transistors are designed for high-voltage, high-speed switching of inductive circuits where fall time and rbsoa are critical. they are particularly well-suited for line-operated switchmode applications. the MJE16004 is a high-gain version of the mje16002 and mjh16002 for applications where drive current is limited. typical applications: ? switching regulators ? high resolution deflection circuits ? inverters ? motor drives ? fast switching speeds 50 ns inductive fall time @ 75c (typ) 70 ns crossover time @ 75c (typ) ? 100c performance specified for: reverse-biased soa inductive switching times saturation voltages leakage currents maximum ratings mje16002* MJE16004* 'motorola preferred device 5.0 ampere npn silicon power transistors 450 volts 80 watts to-220ab rating collector-emitter voltage collector-emitter voltage emitter-base voltage collector current ? continuous ? peak(1) base current ? continuous ? peak(1) total power dissipation @ tc = 25c @tc = 100c derate above tq = 25c operating and storage junction temperature range symbol vceo(sus) vcev veb ic icm ib !bm pd tj. tstg value 450 850 6.0 5.0 10 4.0 8.0 80 32 0.64 -65 to +150 unit vdc vdc vdc adc adc watts wrc c thermal characteristics characteristic thermal resistance, junction to case lead temperature for soldering purposes: 1/8" from case for 5 seconds symbol r9jc tl max 1.56 275 unit c/w c (1) pulse test: pulse width = 5 ms, duty cycle < 10%. designer's data for "worst case" conditions ? the designer's data sheet permits the design of most circuits entirely from the information presented. soa limit curves ? representing boundaries on device characteristics ? are given to facilitate "worst case" design. preferred devices are motorola recommended choices for future use and best overall value. nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished b> nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. n.i semi-conductors encourages customers to verify that datasheets are current before placing orders. ounlitv
mje16oo2mje16oo4 electrical characteristics (tc = 25c unless otherwise noted) characteristic symbol min typ max unit off characteristics (1) collector-emitter sustaining voltage (table 2) (ic = 100ma, lb = 0) collector cutoff current (vcev = 850 vdc, vbe(off) = 1 -5 vdc) (vcev = 850 vdc, vbe(off) = 1 -5 vdc, tc = 100c) collector cutoff current (vce = 850 vdc, rbe = so a, tc = iooc) emitter cutoff current MJE16004 (ic = 3.0 adc, ib = 0.4 adc) mje16002 (ic = 3.0 adc, ib = 0.3 adc) MJE16004 (ic = 3.0 adc, ib = 0.4 adc, tc = 100c) mje16002 (ic = 3.0 adc, ib = 0.3 adc, tc = 100c) MJE16004 base-emitter saturation voltage (ic = 3.0 adc, ib = 0.4 adc) mje16002 (lc = 3.0 adc, ib = 0.3 adc) MJE16004 (ic = 3.0 adc, is = 0.4 adc, tc = 100c) mje16002 (ic = 3.0 adc, ib = 0.3 adc, tc = 100c) MJE16004 dc current gain (ic = 5.0 adc, vce = 5.0 vdc) mje16002 MJE16004 vce(sat) vbe(sat) hfe ? ? 5.0 7.0 ? ? i 1.0 1.0 2.5 2.5 2.5 2.5 1.5 1.5 1.5 1.5 ? vdc vdc dynamic characteristics output capacitance (vcb = 10 vdc, ie = o, ftest = 1.0 khz) cob ? ? 200 pf switching characteristics resistive load (table 1) mje16002/mjh10002 delay time rise time storage time fall time storage time fall time (ic = 3.0 adc, vcc = 250 vdc, lg.| - o 4 adc pw = 30 us, duty cycle < 2.0%) (ib2 = 0.8 adc, rb2 = 8.0 a) a/dt/~m = 5 n vrlr^ td tr ts tf ts tf ? ? ? ? ? ? 30 100 1000 60 400 130 100 300 3000 300 ? ? ns resistive load (table 1) MJE16004/mjh 16004 delay time rise time storage time fall time storage time fall time (lg = 3.0adc, vcg = 250 vdc, ibi ~03 adc pw = 30 us, duty cycle < 2.0%) (lb2 = 0.6 adc, rb2 - 8.0 fi) cvdi=/??\ *s fl vrir^ td tr ts tf ts tf ? ? ? ? ? ? 30 130 800 80 250 60 100 300 2700 350 ? ? ns (1) pulse test: pw = 300 us, duty cycle < 2%.
mje16002MJE16004 switching characteristics (continued) characteristics symbol win typ max unit inductive load (table 2) mje16002 storage time fall time crossover time storage time fall time crossover time 101 =0.4 adc, vbe(off) = 5.0 vdc, vce(pk) = 400vdc) (tj = 100c) (tj = 150c) tsv tfi tc tsv tfi tc ? ? ? ? ? ? 500 100 120 600 120 160 1600 200 250 ? ? ? ns inductive load (table 2) MJE16004 storage time fall time crossover time storage time fall time crossover time ibi = 0.3 adc, vbe(off) = 5.0vdc, w,^,-, , , ? 4f\ \/hrm vce(pk) huu vgc,) (tj = 100c) (tj = 150c) tsv tfi tc tsv tfi tc ? ? ? ? ? ? 400 80 90 450 100 110 1300 150 200 ? ? ? ns (1) pulse test: pw = 300 us, duty cycle < 2%.
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